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| MBR40L45CTG SWITCHMODETM Power Rectifier 45 V, 40 A Features and Benefits * * * * * * Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard-Ring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 45 VOLTS Applications * Power Supply - Output Rectification * Power Management * Instrumentation Mechanical Characteristics: 1 2, 4 3 * * * * * * * Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight (Approximately): 1.9 Grams (TO-220) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube for TO-220 This is a Pb-Free Device* 4 TO-220 CASE 221A PLASTIC 1 MARKING DIAGRAM AYWW B40L45G AKA 2 3 MAXIMUM RATINGS Please See the Table on the Following Page B40L45 A Y WW G AKA = Device Code = Assembly Location = Year = Work Week = Pb-Free Device = Polarity Designator ORDERING INFORMATION Device MBR40L45CTG Package TO-220 (Pb-Free) Shipping 50 Units/Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 1 April, 2007 - Rev. 0 Publication Order Number: MBR40L45CT/D MBR40L45CTG MAXIMUM RATINGS (Per Diode Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 145C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) ESD Ratings: Machine Model = C Human Body Model = 3B Symbol VRRM VRWM VR IF(AV) IFRM IFSM TJ Tstg dv/dt Value 45 Unit V 20 40 200 -65 to +175 -65 to +175 10,000 > 400 > 8000 A A A C C V/ms V THERMAL CHARACTERISTICS Maximum Thermal Resistance - Junction-to-Case - Junction-to-Ambient C/W RqJC RqJA 1.9 72.9 ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 20 A, TC = 25C) (IF = 20 A, TC = 125C) (IF = 40 A, TC = 25C) (IF = 40 A, TC = 125C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25C) (Rated DC Voltage, TC = 125C) vF 0.50 0.48 0.63 0.68 iR 1.2 275 mA V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 MBR40L45CTG TYPICAL CHARACTERISTICS 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 100 150C 10 25C 150C 10 25C 125C 1 125C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 1E+00 IR, REVERSE CURRENT (A) 150C 1E+00 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (A) 150C 125C 1E-01 125C 1E-01 1E-02 1E-02 1E-03 1E-03 25C 1E-04 1E-05 0 5 25C 1E-04 1E-05 0 5 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (V) 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 50 45 40 35 30 25 20 15 10 5 0 80 90 100 110 Square Wave dc Figure 4. Maximum Reverse Current 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (C) Figure 5. Current Derating for MBR40L45CTG http://onsemi.com 3 MBR40L45CTG TYPICAL CHARACTERISTICS 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 10000 PFO, AVERAGE POWER DISSIPATION (W) Square Wave C, CAPACITANCE (pF) 25C dc 1000 100 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 Io, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 6. Forward Power Dissipation Figure 7. Capacitance R(t) TRANSIENT THERMAL RESISTANCE 10 1 D = 0.5 0.2 0.1 0.05 0.01 P(pk) SINGLE PULSE t1 t2 0.1 0.01 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 T1, TIME (sec) 0.1 1 10 100 1000 Figure 8. Thermal Response Junction-to-Case for MBR40L45CTG http://onsemi.com 4 MBR40L45CTG PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AD -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MBR40L45CT/D |
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